CNX82A.W, CNX83A.W, SL5582.W & SL5583.W free download

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6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. PACKAGE DIMENSIONS FEATURES · Input/Output pin distance 10.16 mm · UL recognized (File # E90700) 0.270 (6.86) 0.240 (6.10) APPLICATIONS · Power supply regulators · Digital logic inputs · Microprocessor inputs SCHEMATIC 1 NC 6 1 6 1 SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 6 0.200 (5.08) 0.115 (2.92) 2 5 2 5 0.154 (3.90) 0.100 (2.54) 0.004 (0.10) MIN 0.016 (0.40) 0.008 (0.20) 3 NC CNX82A.W SL5582.W 4 3 NC CNX83A.W SL5583.W 4 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0° to 15° 0.400 (10.16) TYP PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. NO CONNECTION PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE NOTE All dimensions are in inches (millimeters) ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage (CNX83A.W AND SL5583.W) Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD VCEO VCBO VECO IC PD Value -55 to +150 -55 to +100 260 for 10 sec 250 100 5.0 3.0 140 1.33 50 70 7 100 150 2.0 Units °C °C °C mW mA V A mW mW/°C V V V mA mW mW/°C 2/29/00 200024C 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage (CNX83A.W only) Emitter-Collector Breakdown Voltage Test Conditions (IF = 10 mA) (VR = 5.0 V) (IC = 1.0 mA, IF = 0) (IC = 100 µA, IF = 0) (IE = 100 µA, IF = 0) (VCE = 10 V, IF = 0) (VCE = 10 V, IF = 0) Collector-Emitter Dark Current (TA = 70°C) (VCE = 10 V, IF = 0) (TA = 100°C) Collector-Base Dark Current Capacitance Note ** Typical values at TA = 25°C (VCB = 10 V) (VCE = 0 V, f = 1 MHz) ICBO CCE ICEO Symbol VF IR BVCEO BVCBO BVECO Device ALL ALL ALL ALL ALL ALL CNX82A.W CNX83A.W SL5582.W SL5583.W SL5582.W SL5583.W CNX83A.W SL5583.W ALL 8 50 70 7 Min Typ** 1.2 0.001 100 120 10 0.001 0.5 0.050 10 0.5 50 20 nA pF µA Max 1.50 10 Unit V µA V V V Call QT Optoelectronics for more information or the phone number of your nearest distributor. United States 800-533-6786 · France 33 [0] 1.45.18.78.78 · Germany 49 [0] 89/96.30.51 · United Kingdom 44 [0] 1296 394499 · Asia/Pacific 603-7352417 2/29/00 200024C 6-PIN PHOTOTRANSISTOR OPTOC